Method for correcting critical dimension of mask pattern

Details Method for correcting critical dimension of mask pattern Method for correcting critical dimension of mask pattern

2008-12-31

2009-12-08

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S022000, C430S313000, C430S314000

Reexamination Certificate

active

07629093

ABSTRACT:
A method for correcting a critical dimension (CD) of a mask pattern includes forming an light shielding layer over a substrate including a main cell region and a frame region at a periphery of the main cell region; forming an light shielding main pattern in the main cell region and a frame pattern in the frame region by patterning the light shielding layer; measuring a CD of the light shielding main pattern; extracting a CD correction amount from the measured CD; self-aligning a conductive high polymer layer over the frame pattern with electrochemical polymerization; correcting the CD of the main pattern depending on the CD correction amount by performing etch on the main pattern exposed by the conductive high polymer layer; and selectively removing the conductive high polymer layer.

REFERENCES:
patent: 7444616 (2008-10-01), Sandstrom et al.
patent: 10 2007 0068910 (2007-07-01), None

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