Method for controlling the switching speed of bipolar power devi

Details Method for controlling the switching speed of bipolar power devi Method for controlling the switching speed of bipolar power devi

1990-03-13

1992-03-17

Jackson, Jr., Jerome

357 16, 357 4, 357 60, 357 64, 357 29, 357 88, H01L 2972

Patent

active

050973088

ABSTRACT:
The switching speed of bipolar power rectifiers is increased by formation of misfit dislocations in the depletion region, spaced from the substrate/epitaxial layer interface, in order to reduce minority carrier lifetime. The misfit dislocations are formed by the introduction of germanium during epitaxy, and are distributed along the silicon/silicon-germanium interface. Preferably, the germanium containing layer is located proximate the center of the depletion region.

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