Method for controlling the state of conduction of an MOS transis

Details Method for controlling the state of conduction of an MOS transis Method for controlling the state of conduction of an MOS transis

1991-02-22

1994-01-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437 52, 148DIG91, 148DIG93, H01L 2100, H01L 2102, H01L 2126, H01L 21268

Patent

active

052815536

ABSTRACT:
The state of conduction of an MOS transistor 11 is definitively controlled by a laser beam 21, by forming an electrical connection 22 between the gate 16 and the subjacent portion d of the source region 14 or drain region 15. The invention is applicable in particular to the correction (reconfiguration, redundancy) of integrated circuits and to the programming of integrated PROMs.

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