Method for controlling the degree of side-etch in thin oxide fil

Details Method for controlling the degree of side-etch in thin oxide fil Method for controlling the degree of side-etch in thin oxide fil

1974-05-06

1976-03-09

Kimlin, Edward C.

Gas separation: apparatus

Electric field separation apparatus

Electrode cleaner, apparatus part flusher, discharger, or...

96 362, 156 8, 156 17, G03C 500, B60B 900

Patent

active

039429822

ABSTRACT:
In selectively etching a solid oxide thin film which has chemisorbed water (surface hydroxyl groups) in its surface, the thin film is surface-treated with an organic compound which has within its molecule a functional group to react with the surface hydroxyl groups. Thereafter, photo-etching is performed by the conventional method by applying a thin film of a photosensitive organic polymer onto the treated thin film. Through selection of the sort of the organic compound, the degree of side-etch arising in the process of the selective etch can be controlled.

REFERENCES:
patent: 3405017 (1968-10-01), Gee
patent: 3482977 (1969-12-01), Baker
patent: 3520683 (1970-07-01), Kerwin
patent: 3586554 (1971-06-01), Couture et al.
patent: 3716390 (1973-02-01), Garbarini
Pillot, "Mesa Etching Process Using Photolithographic Techniques," IBM Tech. Discl. Bull., Vol. 15, No. 7, 12/72.

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