Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1986-03-21
1988-11-29
Doll, John
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
423406, C01B 21063, C01B 3306
Patent
active
047880490
ABSTRACT:
A method is disclosed for producing silicon nitride wherein the crystal morphology is controlled. The method involves heating a mixture consisting essentially of a chlorosilane and ammonia at a sufficient temperature for a sufficient time to produce a nitogen containing silane as an intermediate. The bulk density of the intermediate is controlled to less than about 0.1 g/cc to result in the silicon nitride having a crystal morphology which is essentially all fibrous, or the bulk density can be controlled to greater than about 0.3 g/cc to result in the silicon nitride having a crystal morphology which is essentially all equiaxial, or the bulk density can be controlled to between about 0.1 g/cc and about 0.3 g/cc to result in the silicon nitride having a crystal morphology which is a mixture of fibrous and equiaxial. The intermediate is then heated at a sufficient temperature for a sufficient time in a non-oxidizing atmosphere to produce the controlled crystal morphology silicon nitride.
REFERENCES:
patent: 4399113 (1983-08-01), Sato et al.
patent: 4517168 (1985-05-01), Kawahito et al.
Long Robert A.
Shallenberger Harrison
Wittmer Dale E.
Castle Donald R.
Doll John
Freeman Lori S.
GTE Products Corporation
Quatrini L. Rita
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