Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2007-09-25
2007-09-25
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S311000
Reexamination Certificate
active
11304778
ABSTRACT:
In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.
REFERENCES:
patent: 5830612 (1998-11-01), Yamada et al.
patent: 5906902 (1999-05-01), Farrow
patent: 2001-143982 (2001-05-01), None
J. Sturtevant, et al., “Implementation of a Closed-loop CD and Overlay Controller for sub-0.25 μm Patterning”,SPIE, vol. 3332, pp. 461-470, 1998.
X. Niu, “Specular Spectroscopic Scatterometry in DUV Lithography”,SPIE, vol. 3677, pp. 159-168, Mar. 1999.
M. G. Moharam, et al., “Diffraction analysis of dielectric surface-relief gratings”,Journal of Optical Society of America, vol. 72, No. 10, pp. 1385-1392, Oct. 1982.
“The Proceedings of the 64thAutumn Meeting of the Japan Society of Applied Physics”, 1p-R-2, p. 641, 2003.
Sasazawa Hideaki
Yoshitake Yasuhiro
Antonelli, Terry Stout & Kraus, LLP.
Renesas Technology Corp.
Young Christopher G.
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