Method for controlling of thermal donor formation in high...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S143000, C438S310000, C438S471000, C438S473000, C438S795000

Reexamination Certificate

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07135351

ABSTRACT:
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of forming thermal donors in an amount sufficient to affect resistivity upon being subjected to a conventional semiconductor device manufacturing process. The present invention further directed to a silicon on insulator structure derived from such a wafer.

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