Method for controlling lateral diffusion of silicon in a self-al

Details Method for controlling lateral diffusion of silicon in a self-al Method for controlling lateral diffusion of silicon in a self-al

1984-07-27

1986-01-28

Lusignan, Michael R.

Coating processes

Electrical product produced

Welding electrode

156643, 156662, 427 93, 427399, B05D 306, B05D 512, B44C 122, C03C 1500

Patent

active

045670587

ABSTRACT:
An improved method for forming a titanium silicide layer comprising placing a silicon layer overcoated with titanium in an ambient atmosphere of ultrapure nitrogen and heating the overcoated layer with radiation from a tungsten-halogen source.

REFERENCES:
Wahl, G. et al, The CVD Deposition of Ti-Si Containing Coating on Ni-Base Super Alloys, pp. 685-698, Electrochemical Society, N.J., 1981.
Shibata, T. et al., Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams, Stanford Electronic Laboratory, Mar. 1981, pp. 637-644.

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