Method for controlling interfacial oxide at a polycrystalline/mo

Fishing – trapping – and vermin destroying

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437233, 437 89, 437186, 437939, 437946, 437952, 148DIG17, 148DIG124, H01L 21265

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051943972

ABSTRACT:
A method of controlling the interfacial oxygen concentration of a monocrystalline/polycrystalline emitter includes the steps of: passivating the monocrystalline silicon surface by immersing the wafer in a diluted HF acid solution; transferring the wafer into a high vacuum environment; heating the wafer to between 400.degree. and 700.degree. C.; exposing the monocrystalline silicon surface to a gas having a partial pressure of oxygen of between 10.sup.-5 to 1 Torr for between 1 and 100 minutes; and, depositing polysilicon onto the monocrystalline silicon surface.

REFERENCES:
Crabbe et al.; "Electrical characterization of polysilicon-to -silicon interfaces"; Mat. Res. Soc. Symp. Proc. vol. 106; 198; pp. 247-252.
"Adsorption of Atomic Hydrogen on Clean Cleaved Silicon (111)*", by G. Schulze and M. Henzler, North-Holland Publishing Company, 1983, pp. 336-350.
"The poly-single crystalline silicon interface", by C. Y. Wong, A. E. Michel, and R. D. Isaac, R. H. Kastl and S. R. Mader, J. Appl. Phys., Feb. 15, 1984, pp. 1131-1134.
"Structure and morphology of polycrystalline silicon-single crystal silicon interfaces", John C. Bravman, Gary L. Patton, and James D. Plummer, J. Appl. Phys., Apr. 15, 1985, pp. 2779-2782.
"TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal-silicon emitter of a new high-performance bipolar transistor", by N. Jorgensen, et al., Adam Hilger Ltd, 1985, pp. 471-476.
IEEE Transactions On Electron Devices, pp. 1766-1770, "Correlation Between the Diffusive and Electric Barrier Properties of the Interface in Polysilicon Contacted n.sup.+ -p Junctions", by Johannes M. C. Stork, et al.
"An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations", by G. R. Wolstenholme, et al., J. Appl. Phys., Jan. 1, 1987, pp. 225-233.
"Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal Annealing", by M. Delfino, et al., J. Electrochem. Soc., Jan. 1, 1989, pp. 215-224.
"Structure and electrical properties of interfaces between silicon films and n.sup.+ silicon crystals", Shin-ichi Ogawa, et al., J. Appl. Phys., Jan. 15, 1989, pp. 668-671.
"A photoemission study of passivated silicon surfaces produced by etching in solutions of HF", by J M C Thornton, et al., IOP Publishing Ltd., 1989, pp. 847-851.
IEEE 1990 Bipolar Circuits and Technology Meeting 1.4, pp. 33-36, "Interface Control in Double Diffused Polysilicon Bipolar Transistors", by J. E. Turner, et al.
"kCharacterization of polycrystalline silicon-single-crystal silicon interfaces and correlation to bipolar transistor device data", by Paul A. Ronsheim, et al., J. Appl. Phys., Jan. 1, 1991, pp. 495-498.
"Poly-emitter Device Manufacturing in A Cluster Tool", by Chris J. Werkhoven, et al., Semiconductor International, May 1991, pp. 228-230.

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