Method for controlling growth of a silicon crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

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117 13, 117202, 117208, 117932, C30B 100

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active

058824022

ABSTRACT:
A method and system for determining a diameter of a silicon single crystal being pulled from a silicon melt contained in a heated crucible. The melt has a surface with a meniscus visible as a bright area adjacent the pulled crystal. A camera generates an image of the interior of the crucible including a portion of the bright area adjacent the crystal. Image processing circuitry defines a central window region of the image having an elliptical shape at a position corresponding to an approximate center of the crystal and processes the image as a function of its pixel values to detect edges within the central window region. The image processing circuitry further groups the detected edges to define an object in the image corresponding to the crystal, determines a dimension of the defined object and determines an approximate diameter of the crystal as a function of the determined dimension of the defined object.

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