Method for controlling evaporation for vapor deposition

Details Method for controlling evaporation for vapor deposition Method for controlling evaporation for vapor deposition

1991-09-03

1994-01-11

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of coating supply or source outside of primary...

427597, 4272481, 21912115, B05D 306, C23C 1600, B23K 1500

Patent

active

052779386

ABSTRACT:
The invention relates to a method and an apparatus by means of which a material is vaporized in a treatment chamber by means of an electron beam. Due to controlling the inhomogenity of power distribution over the working area of the beam it becomes possible to prevent local overheating of the target material and thus of a deformation of the target surface. This is realized by oscillating the beam around its working point. The amplitude of the oscillation is, thereby, of almost a few beam diameters and this oscillation is superimposed on the momentarily working position of the beam on the target.

REFERENCES:
patent: 3432335 (1969-03-01), Schiller et al.
patent: 3453143 (1969-07-01), Meixner et al.
patent: 3526206 (1970-09-01), Jones
patent: 3645786 (1972-02-01), Tannenberger et al.
patent: 3655430 (1972-04-01), Greaves
patent: 3710072 (1973-01-01), Shrader et al.
patent: 4000428 (1976-12-01), James et al.
patent: 4230739 (1980-10-01), Aichert et al.
patent: 4958059 (1990-09-01), Lizee
patent: 4973818 (1990-11-01), Bittenbrunn et al.
patent: 5132506 (1992-07-01), Shintaku et al.
French Search Report Jan. 15, 1993 in FR 9111219.

Affiliated with

Also associated with

Rating

Method for controlling evaporation for vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling evaporation for vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling evaporation for vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1629691