Method for controlling delays in silicon on insulator circuits

Details Method for controlling delays in silicon on insulator circuits Method for controlling delays in silicon on insulator circuits

1998-12-30

2000-08-29

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327534, H03K 301

Patent

active

061114553

ABSTRACT:
A method for controlling delays in silicon on insulator circuits is disclosed. A semiconductor integrated circuit device comprises a first circuit and a second circuit. The first circuit includes multiple transistors, some of which have a floating body. In addition, the first circuit includes an input and an output. The second circuit is selectively coupled to a floating body of some of the transistors in the first circuit in order to control the delay of the output of the first circuit.

REFERENCES:
patent: 5461338 (1995-10-01), Hirayama et al.
patent: 5814899 (1998-09-01), Okumura et al.
patent: 5912591 (1999-06-01), Yamada
patent: 5917365 (1999-06-01), Houston
Theodore Houston, "A Novel Dynamic VT Circuit Configuration," Proceedings 1997 IEEE International SOI Conference, Oct. 1997, pp. 154-155.

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