Method for controlling charge amount of ion beam and a wafer...

Details Method for controlling charge amount of ion beam and a wafer... Method for controlling charge amount of ion beam and a wafer...

2006-12-29

2009-02-17

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S42300F, C250S424000

Reexamination Certificate

active

07491952

ABSTRACT:
A method of controlling charge amount of an ion beam includes: providing a semiconductor wafer; forming insulation layer on the surface of the wafer, with gaps between the insulation layer dividing the surface of the wafer into an open region and a narrow and long region; implanting an ion beam into the wafer, in which a specific amount of electrons is added into the ion beam; emitting a plurality of light beams to the surface of the wafer along the open region and the narrow and long region, and measuring a plurality of light reflectivity; adjusting the amount of the added electrons according to the variation of the reflectivity. The method of the present invention can be used to determine whether the amount of added electrons is optimal by monitoring the uniformity of ion implantation, and make adjustment accordingly.

REFERENCES:
patent: 2006/0113640 (2006-06-01), Yu et al.
patent: 2008/0078958 (2008-04-01), Zhu

Affiliated with

Also associated with

Rating

Method for controlling charge amount of ion beam and a wafer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling charge amount of ion beam and a wafer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling charge amount of ion beam and a wafer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4079291