Method for controlling characteristics of a semiconductor integr

Details Method for controlling characteristics of a semiconductor integr Method for controlling characteristics of a semiconductor integr

1980-11-17

1983-07-12

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 91, 427 35, 427 431, H01L 21265, B01J 1700

Patent

active

043928935

ABSTRACT:
The characteristics of integrated circuits, such as the gate threshold voltage (Vtx) of insulated gate field effect transistors, or the current amplification factor (h.sub.FE) of bipolar transistors are altered by the irradiation of the X-ray with predetermined amount.
The X-ray irradiation is used to make the integrated circuits with very accurate characteristics with high yield of production. It is also used to make variety of sample information by changing the characteristics of the same device one after another.

REFERENCES:
patent: 3570112 (1971-03-01), Barry et al.
patent: 3688389 (1972-09-01), Nakamura et al.
patent: 4184896 (1980-01-01), Miles
Voland et al., Appl. Physics, 8 (1975) 211.
Dimaria et al., J. Appl, Phys. 48 (1977) 898.
Verhoeven et al., Phys., Stat. Sol. 24a (1974) p. 441.
Siiygh et al., Radiation Effects, 60 (1982) 161.

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