Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2006-08-22
2006-08-22
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S016000, C438S714000, C438S719000, C438S725000, C216S060000, C216S067000, C216S079000
Reexamination Certificate
active
07094613
ABSTRACT:
Embodiments of the invention generally relate to a method for etching in a processing platform (e.g. a cluster tool) wherein robust pre-etch and post-etch data may be obtained in-situ. The method includes the steps of obtaining pre-etched critical dimension (CD) measurements of a feature on a substrate, etching the feature; treating the etched substrate to reduce and/or remove sidewall polymers deposited on the feature during etching, and obtaining post-etched CD measurements. The CD measurements may be utilized to adjust the etch process to improved the accuracy and repeatability of device fabrication.
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Liu Wei
Mui David
Sasano Hiroki
Chen Eric B.
Norton Nadine G.
Patterson & Sheridan LLP
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