Method for controlling a vaporizer of ion implantation...

Details Method for controlling a vaporizer of ion implantation... Method for controlling a vaporizer of ion implantation...

2005-12-13

2008-03-25

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S425000

Reexamination Certificate

active

07348577

ABSTRACT:
Disclosed is a method for controlling a vaporizer in ion implantation equipment during indium implantation process. The method comprises the steps of: (a) injecting a solid indium trichloride in a vaporizer; (b) raising a vaporizer temperature up to a first temperature at which water is able to be vaporized; (c) conditioning the vaporizer temperature in a temperature range between the first temperature and a second temperature at which the solid indium trichloride is able to be hydrolyzed, until water contained in the solid indium chloride can be removed; and (d) raising the vaporizer temperature up to a third temperature at which the indium trichloride is able to be vaporized.

REFERENCES:
patent: 6107634 (2000-08-01), Horsky
patent: 6497744 (2002-12-01), Yamashita
patent: 6570166 (2003-05-01), Yamashita
patent: 2005/0040496 (2005-02-01), Jain

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