Method for controlling a chemical mechanical polishing (CMP)...

Details Method for controlling a chemical mechanical polishing (CMP)... Method for controlling a chemical mechanical polishing (CMP)...

2005-08-23

2005-08-23

Nguyen, Dung Van (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

Computer controlled

C451S041000

Reexamination Certificate

active

06932671

ABSTRACT:
A method is provided for controlling a chemical mechanical polishing (CMP) operation. The method is operative in a CMP apparatus having a plurality of end point detection probes and in which a plurality of process variables can be set to adjust the removal rate across a layer that is to be polished. In accordance with the method, the process variables are adjusted to a first setting and a layer overlying a work piece is polished using that setting. Information from the plurality of end point detection probes is collected and evaluated to determine removal rate of the layer. The process variables are adjusted in response the evaluation and a second layer on a second work piece is polished using the adjusted settings.

REFERENCES:
patent: 6350179 (2002-02-01), Campbell et al.
patent: 6827629 (2004-12-01), Kim et al.
patent: 2003/0087459 (2003-05-01), Laursen et al.
patent: 2005/0026542 (2005-02-01), Battal et al.

Affiliated with

Also associated with

Rating

Method for controlling a chemical mechanical polishing (CMP)... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling a chemical mechanical polishing (CMP)..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling a chemical mechanical polishing (CMP)... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3469192