Method for controlled positioning of a compound layer in a multi

Fishing – trapping – and vermin destroying

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437225, 437247, 20419237, H01L 21441, H01L 21302

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054181887

ABSTRACT:
A method for controlled positioning of a compound layer such as TiSi.sub.2 or CoSi.sub.2 in a multilayer device such as a semiconductor is disclosed. The compound surface layer is situated adjacent to an intermediate layer comprised of one of the two types of atoms present in the molecules of the adjacent compound surface layer. The intermediate layer is also situated adjacent to a base layer, such as a semiconductor substrate. An epitaxial silicon layer is the suggested intermediate layer where the surface layer is comprised of TiSi.sub.2 or CoSi.sub.2. By simultaneously heating the multilayer device and using an appropriate etching process for selectively removing the atoms from the surface of the compound surface layer which are common in both the compound and intermediate layer (i.e., silicon) the intermediate layer can be reduced in thickness and/or fully consumed while the structural integrity of the compound surface layer remains essentially unchanged. This results in positioning the surface layer directly adjacent to the base layer, thus allowing for the controlled placement of the compound layer in the multilayer device.

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