Method for controlled implantation of elements into the surface

Details Method for controlled implantation of elements into the surface Method for controlled implantation of elements into the surface

1998-08-24

2000-09-19

Berman, Jack

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250282, 250309, H01L 2166, H01L 21265, H01J 4904

Patent

active

061216240

ABSTRACT:
A method for introducing a known concentration of at least one species of ions into the surface or near surface of a substrate can be employed as a calibration technique prior to subsequent surface or near surface measurement. The method involves the introduction of a removable layer onto the surface followed by ion implantation which is performed to provide a known concentration of implanted ion at the interface between the removable layer and the surface. Subsequent to removal of the removable layer, the surface can be subjected to determination of elemental concentrations at the surface or near surface levels by techniques such as total reflection x-ray fluorescence or secondary ion mass spectrometry.

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