Method for control of an open gallium diffusion

Details Method for control of an open gallium diffusion Method for control of an open gallium diffusion

1978-10-30

1980-08-12

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, H01L 734

Patent

active

042171547

ABSTRACT:
A method for controlling a gallium diffusion with at least one silicon wafer, wherein precisely dosed amounts of hydrogen, oxygen, and optionally nitrogen are mixed in a combustion chamber where the hydrogen and oxygen is converted into water vapor and hydrogen. The combustion chamber is connected to a source portion of the diffusion oven, wherein is contained a gallium oxide containing crucible. The water vapor, hydrogen (and nitrogen) mixture is then passed from the combustion chamber to the source over where the volatile sub-oxide (Ga.sub.2 O), is produced and then carried in a gas stream to the silicon wafer contained in a main portion of the diffusion oven for diffusion therein.

REFERENCES:
patent: 3492175 (1970-01-01), Conrad et al.
patent: 3689330 (1972-09-01), Dosen et al.
patent: 3770521 (1973-11-01), Demsky et al.
patent: 3806382 (1974-04-01), Fitzgibbons et al.
Tylan Corp. Brochure, "Gas-Systems for H.sub.2 -O.sub.2. . . ", R-6193-2 `A`, Apr. 1972, pp. 1-7.
Lyndberg Co. (USA), "Burnt H.sub.2 -Oxidation Systems", Specification 87042, pp. 1-2.
Frosch et al., "Diffusion . . . in Si . . . ", J. Electrochem. Soc. 105 (1958) 695.

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