Method for continuously making a semiconductor device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 62, 438484, 438907, H01L 2122

Patent

active

057535310

ABSTRACT:
A method of continuous manufacture of semiconductor integrated circuits, said method and apparatus adapted to contain the semiconductor substrate, semiconductor deposition coating processes, and etching processes within a substantially collocated series of process chambers so that the semiconductor travels from one chamber to the next without exposure to airborne impurities and contact with manufacturing personnel. The invention has particular utility in the high volume fabrication of large surface area semiconductor circuits such as active matrix liquid crystal displays. The present invention contains a roll-to-roll and continuous belt embodiment.

REFERENCES:
patent: 3279964 (1966-10-01), Beck
patent: 3511703 (1970-05-01), Peterson
patent: 3667989 (1972-06-01), Keating
patent: 3790404 (1974-02-01), Garnache et al.
patent: 4227291 (1980-10-01), Schumacher
patent: 4410558 (1983-10-01), Izu et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4478880 (1984-10-01), Belouet
patent: 4485125 (1984-11-01), Izu et al.
patent: 4643627 (1987-02-01), Bednorz et al.
patent: 4664939 (1987-05-01), Ovshinsky
patent: 4681654 (1987-07-01), Clementi et al.
patent: 4728406 (1988-03-01), Banergee et al.
patent: 4786616 (1988-11-01), Awal et al.
patent: 4789645 (1988-12-01), Calviello et al.
patent: 4951601 (1990-08-01), Maypan et al.
patent: 5019233 (1991-05-01), Blake et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5186594 (1993-02-01), Toshima et al.
patent: 5256562 (1993-10-01), Vu et al.
patent: 5266116 (1993-11-01), Fujioka et al.
patent: 5386798 (1995-02-01), Lowndes et al.
Atherton, R.W., et al, "Performance Analysis of Multi-Process Semiconductor Manufacturing Equipment," Abs. 1990 Proceedings, Advanced Semiconductor Mfg Conference and Workshop.
Beni, G., et al, "Vacuum Mechatronics," In Introduction to Vacuum Mechatronics, Chapter 1, Center for Robotic Systems in Microelectronics, Univ of Cal, Santa Barbara, California. Date unknown.
Ehrlich, D.J., et al, "Emerging Technology for in situ Processing: Patterning Alternatives," J. Vac. Sci. Tech. B6(3):May/Jun. 1988.
Gamo, K, "Focused Ion Beam Technology," Vacuum 42(1&2):89-93 (1991).
Gamo, K., "Ion Beam Microfabrication," Vacuum 44(11&12):1089-1094 (1993).
Harriott, L.R, "In situ Processing of Semiconductors," Materials Science and Engineering, B14:336-345 (1992).
Hayashi, T., et al., "High Performance Scaled Flash-Type EEPROMs Fabricated by in situ Multiple Rapid Thermal Processing," Electronics Letters 29(25):2178-2179 (1993).
Larrabee, G.B., "The Intelligent Microelectronics Factory of the Future," Abs. 1991 Proceedings, Int'l Semiconductor Mfg. Sci. Symp.
Petroff, P.M., et al., "Nanostructures Processing by Focused Ion Beam Implantation," J. Vac. Sci. Technol. B9(6):Nov./Dec. 1991.
Rubloff, G.W., "Maskless Selected Area Processing," J. Vac. Sci. Technol B7(6):Nov./Dec. 1989.
Rudder, R.A., et al., "Development of an Ultrahigh Vacuum, in vacuo Wafer Transfer Facility Integrated Processing," J. Vac. Sci. Technol A7(8):May/Jun. 1989.
Shirazi, M., et al., "Vacuum Mechatronics and Self-Contained Manufacturing for Microelectronics Processing," 7th IEEE/CHMT Int'l Electronic Mfg Tech. Symp., Sep. 1989.
Steckl, A.J., "Particle-Beam Fabrication and In Situ Processing of Integrated Circuits," Proceedings of the IEEE, vol. 74, No. 12, Dec. 1986.
Wood, S., et al., "Configuration and Management Strategies for Cluster-Based Fabs," Abs. 1993 Proceedings, International Semiconductor Manufacturing Science Symposium.
Yamada, I., "Advanced Ion Beam Processing Projects in Japan," Nuclear Instruments and Methods in Physics Research B59/60 1467-1475 (1991).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for continuously making a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for continuously making a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for continuously making a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1852432

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.