Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1993-10-06
1995-02-07
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 84, 117 88, 117 92, 117104, 117103, 437 3, 148DIG64, C03B 3120
Patent
active
053867980
ABSTRACT:
A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.
REFERENCES:
patent: 5110790 (1992-05-01), Feenstra et al.
patent: 5164040 (1992-11-01), Eres et al.
Lowndes Douglas H.
McCamy James W.
Adams Harold W.
Breneman R. Bruce
Griffin J. Donald
Martin Marietta Energy Systems Inc.
McKee Michael E.
LandOfFree
Method for continuous control of composition and doping of pulse does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for continuous control of composition and doping of pulse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for continuous control of composition and doping of pulse will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1104460