Method for contacting conductive structures in VLSI circuits

Details Method for contacting conductive structures in VLSI circuits Method for contacting conductive structures in VLSI circuits

1992-03-17

1994-08-09

Maples, John S.

Fishing, trapping, and vermin destroying

437187, 437238, 156643, 156663, H01L 21268, H01L 21306, H01L 21441

Patent

active

053366360

ABSTRACT:
UV-transparent insulating layers, particularly silicon oxide, overlying conductive structures on a semiconductor substrate, for example an aluminum interconnect, are locally removed in order to uncover the interconnect for measuring and testing purposes, repairs or other uses. For that purpose, the semiconductor substrate is introduced into a vacuum chamber into which a gaseous metal compound, particularly a metal carbonyl, is admitted with a carrier gas, and the light of a pulsed UV laser is directed onto the location to be exposed. No highly toxic or corrosive halogen compounds are required. After the removal of the insulating oxide layer, a metal layer can be immediately subsequently locally deposited onto the exposed interconnect from the gaseous metal carbonyl with the same method. A good contact, for example measuring tips, are thus enabled in a simple way.

REFERENCES:
patent: 4668337 (1987-05-01), Sekwe et al
patent: 4693779 (1987-09-01), Okuhira et al.
patent: 4868068 (1989-09-01), Yamaguchi et al.
SPIE, vol. 459 Laser Assisted Deposition, Etching, and Doping, (1984)--"UV Laser-Induced Radical-Etching For Microelectronic Processing", by G. L. Loper et al, pp. 121-127.
Solid State Technology--Jun. 1985--"Laser-Induced Chemical Vapor Deposition", by Raj Solanki et al, pp. 220-227.

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