Method for contacting a semiconductor device

Fishing – trapping – and vermin destroying

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437186, 437193, 437200, 148DIG19, H01L 21283, H01L 21335

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active

052368521

ABSTRACT:
An electrical contact (46) to a phosphorous doped polysilicon gate electrode (18) is formed by preventing arsenic, from a source and drain implant, from doping a portion (22) of the polysilicon gate electrode (18). A photoresist mask (20) covers a portion (22) of the polysilicon gate electrode (18) during the implant, thus preventing it from being doped. An electrical contact (46) is then formed to the masked portion (22) of the polysilicon gate electrode (18).

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