Method for constructing semiconductor-on-insulator

Details Method for constructing semiconductor-on-insulator Method for constructing semiconductor-on-insulator

1992-10-26

1995-07-04

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 28, 20419237, H01L 21265

Patent

active

054299551

ABSTRACT:
A method for constructing a semiconductor-on-insulator is provided. A sacrificial layer (12) of a predetermined thickness is first formed on a semiconductor wafer (10) surface. The wafer (10) is then subjected to an ion implantation process to place the ions (16) at predetermined depths below the semiconductor wafer surface. During the implantation process, the sacrificial layer (12) is gradually sputtered away and thereby compensating the gradual outgrowth of the silicon surface due to the volume of the implanted ions (16). A post-implant anneal is performed to allow the ions (16) to react with the semiconductor to form a buried insulating layer (24).

REFERENCES:
patent: 4704302 (1987-11-01), Bruel et al.
patent: 4749660 (1988-06-01), Short et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5080730 (1992-01-01), Wittkower
patent: 5143858 (1992-09-01), Tomozane et al.

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