Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-05-08
2000-09-12
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, H01L 218242, H01G 706
Patent
active
061176885
ABSTRACT:
A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of a FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
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patent: 5838035 (1998-11-01), Ramesh
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Evans, Jr. Joseph T.
Womack Richard
Radiant Technologies, Inc.
Tsai Jey
Ward Calvin B.
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