Method for constructing a rom for redundancy and other applicati

Details Method for constructing a rom for redundancy and other applicati Method for constructing a rom for redundancy and other applicati

1974-09-30

1976-05-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

29576R, 156 18, 427;91, C23F 102

Patent

active

039590470

ABSTRACT:
Disclosed is an improved method for manufacturing semiconductor integrated circuitry whereby interconnection pad limiting metallurgy and read only fusible link memory structure is simultaneously formed by first blank depositing a composite metal film followed by in situ forming pad metallurgy and said read only link structure utilizing photoresist and etch techniques. Said read only memory link structure is utilized for directing the use of redundant lines in place of defective array bits.

REFERENCES:
patent: 3430104 (1969-02-01), Burgess et al.
patent: 3697318 (1972-10-01), Feinberg et al.
patent: 3740523 (1973-06-01), Cohen et al.
patent: 3780320 (1973-12-01), Dorler et al.
IBM Technical Discosure Bulletin, Vol. 14, No. 7, Dec. 1971, Integrated Magnetic Memory Structure, W. B. Archey et al., pp. 1977 and 1978.
IBM Technical Disclosure Bulletin, Vol. 16, No. 4, Sept. 1973, Passivated Refractory Gate Field Transistor by J. R. Gardiner et al., pp. 1064 & 1065.

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