Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2011-06-21
2011-06-21
Trinh, Minh (Department: 3729)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C029S025410, C029S025420, C361S521000, C361S509000, C607S005000
Reexamination Certificate
active
07963999
ABSTRACT:
One embodiment includes a method that includes positioning a first substantially planar electrode including material defining a first aperture into a capacitor stack in alignment with a second substantially planar electrode such that a first non-aperture portion of the second substantially planar electrode at least partially overlays the first aperture and joining the first substantially planar electrode to the second substantially planar electrode proximal the material defining the first aperture and the first non-aperture portion of the second substantially planar electrode.
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Cardiac Pacemakers Inc.
Schwegman Lundberg & Woessner, P.A.
Trinh Minh
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