Method for conditioning nitride surface

Details Method for conditioning nitride surface Method for conditioning nitride surface

1980-10-10

1982-05-18

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 94, 427346, B05D 306

Patent

active

043305695

ABSTRACT:
A method of conditioning a nitride surface by treating it with ionized oxygen is disclosed. The nitride surface is placed in a vacuum and treated with the ionized oxygen for a period of time sufficient to condition the nitride for subsequent processing steps. The ionized oxygen treatment is performed substantially at ambient temperature. The conditioning method is included in a process for improving the adhesion characteristics of a photoresist film to a silicon nitride surface. A liquid solution of hexamethyldisilazane is applied to the conditioned nitride surface. Thereafter, a photoresist is applied, exposed through a photographic mask and developed in a known manner for the purpose of forming a photoresist masking film pattern. The photoresist film pattern typically serves as a mask during an etching process in which areas not covered by photoresist are removed by a suitable etching solution.

REFERENCES:
patent: 3549368 (1970-12-01), Collins et al.
patent: 3687722 (1972-08-01), Saxena
Erez et al., "Pattern Etching Fotoceramic or Sputtered SiO.sub.2 ", IBM Tech. Disc. Bull., vol. 16, No. 8, Jan. 1974, p. 2755.

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