Method for concurrently forming thin film resistor and thick fil

Details Method for concurrently forming thin film resistor and thick fil Method for concurrently forming thin film resistor and thick fil

1996-12-11

1998-03-03

Tsai, Jey

Fishing, trapping, and vermin destroying

437192, 437918, 148DIG136, H01L 2170, H01L 2700

Patent

active

057233594

ABSTRACT:
A method forms a thin film resistor with a thick film resistor on one hybrid IC substrate, and provides a high efficiency hybrid IC utilizing advantages of both resistors. The method includes the steps of: screen-printing a thick film resistor paste on an alumina substrate, drying and performing a plastic process, and thus forming a thick film resistor; forming a thick film protecting layer on the thick film resistor; sequentially forming a tantalum (Ta) layer for a thin film resistor, a titanium (Ti) layer, a palladium (Pd) layer and a copper (Cu) layer for a conduction line on the substrate; depositing a negative photoresist layer on the Cu layer, light-exposing necessary portions of the negative photoresist layer to ultraviolet rays; sequentially electroplating a copper (Cu) layer, a nickel (Ni) layer and a gold (Au) layer on the copper (Cu) layer portions which are exposed due to an elimination of the negative photoresist layer, making a conduction line, and removing a remaining light-exposure portion of the negative photoresist layer; etching titanium (Ti) layer, palladium (Pd) layer and copper (Cu) layer of a remaining portion including the conduction line, and depositing a positive photoresist layer thereon; light-exposing necessary portions in the positive photoresist to ultraviolet rays, etching tantalum (Ta) layer portions exposed in the vicinity of removed portions, and forming a thin film resistor.

REFERENCES:
patent: 5055164 (1991-10-01), Hawkins et al.
patent: 5420063 (1995-05-01), Naghsoudnia et al.
patent: 5468672 (1995-11-01), Rosvold

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