Method for compensating for scatter/reflection effects in...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S296000, C430S942000

Reexamination Certificate

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06953644

ABSTRACT:
A method for compensating for scatter/reflection effects in particle beam lithography includes the following steps: providing at least one layer of a material that is sensitive to particle beams, using at least one particle beam to write predetermined patterns in a limited area of the material that is sensitive to particle beams, and using at least one particle beam to write at least one frame, which surrounds the limited area, into the material that is sensitive to particle beams so that variations in the background dose within the limited area are less than 30% of the maximum background dose within the limited area. This provides the advantage that a considerably more homogeneous background dose and hence considerably less variation in the CD measure, can be produced within the area that is written to by the particle beam, in a simple and cost-effective manner.

REFERENCES:
patent: 5210696 (1993-05-01), Yano
patent: 6291119 (2001-09-01), Choi et al.
patent: 6361911 (2002-03-01), Tsai et al.
patent: 2001/0016295 (2001-08-01), Choi et al.
patent: 41 30 895 (1992-04-01), None
patent: 198 40 833 (2000-03-01), None
patent: 59167018 (1984-09-01), None

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