Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-04-21
1977-02-01
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148188, 357 22, H01L 21225
Patent
active
040060462
ABSTRACT:
A semiconductor wafer having a base dopant source disposed on its surface receives a surface coating consisting of, for example, a silicon nitride film. An emitter opening is formed in the silicon nitride surface coating and a portion of the base dopant source is stripped away within the emitter opening. Diffusion of the base region will result in predetermined geometrical regions of varying concentration of the base dopant as a result of the surface coating and the effect of the oxidizing atmosphere. Subsequent deposition and diffusion of the emitter region provides for smaller base widths and eliminates the need for subsequent deposition and diffusion of high concentration base dopant contact regions.
REFERENCES:
patent: 3575742 (1971-04-01), Gilbert
patent: 3586548 (1971-06-01), Pommerrenig
patent: 3615938 (1971-10-01), Tsai
patent: 3719535 (1973-03-01), Zoroglu
patent: 3765963 (1973-10-01), Okabe et al.
patent: 3767484 (1973-10-01), Takagi et al.
patent: 3839104 (1974-10-01), Yuan
patent: 3915767 (1975-10-01), Welliver
Ozaki G.
TRW Inc.
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