Method for cold cleaving of laser wafers into bars

Details Method for cold cleaving of laser wafers into bars Method for cold cleaving of laser wafers into bars

1997-12-16

1999-11-30

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

438460, 438691, H01L 2100

Patent

active

059942304

ABSTRACT:
The cleavage of semiconductor crystalline wafers into laser diodes or laser diode bars is carried out at a low temperature at which both the semiconductor crystal substrate and the laser-forming laminate structure thereon are imbrittled. Cleavage at such low temperatures permits the cleavage planes to be closer together than was hitherto possible. A thickness to cavity length ratio of the resulting laser diodes or laser diode bars is approximately 1 as a result compared to 3/4 by prior art techniques. Also, the energy required for cleaving is reduced thus ensuring mirror surfaces at the cleavage planes.

REFERENCES:
patent: 3562057 (1971-02-01), McAlister et al.
patent: 4325182 (1982-04-01), Tefft et al.

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