Method for coding semiconductor read only memory device

Details Method for coding semiconductor read only memory device Method for coding semiconductor read only memory device

1995-05-23

1997-07-15

Niebling, John

Fishing, trapping, and vermin destroying

437 49, 437 52, H01L 21265, H01L 2700, H01L 2170

Patent

active

056482892

ABSTRACT:
A method for coding a semiconductor ROM. The method includes the steps of: carrying out a local oxidizing process on a semiconductor substrate to separate the substrate into field regions and active regions; forming a gate insulating layer; depositing a polysilicon layer; and patterning the structure by applying a photo etching process to form a polysilicon gate only on a portion where an enhancement transistor is to be formed. Further, impurity ions are ion-implanted into a source/drain region by utilizing a gate of an enhancement transistor as a mask, and simultaneously, impurity ions are ion-implanted into a region where a drain, a gate and a source of a depletion transistor are to be formed, whereby n type impurity layers of the same depth are formed to interconnect them.

REFERENCES:
patent: 4517732 (1985-05-01), Oshikawa
patent: 4608748 (1986-09-01), Noguchi et al.
patent: 4720323 (1988-01-01), Sato
patent: 5331590 (1994-07-01), Josephson et al.
patent: 5422296 (1995-06-01), Lage
patent: 5453392 (1995-09-01), Hong et al.

Affiliated with

Also associated with

Rating

Method for coding semiconductor read only memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for coding semiconductor read only memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for coding semiconductor read only memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1492084