Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1975-01-10
1977-09-06
Vertiz, O. R.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
204192R, 204192D, 204298, C23C 1500
Patent
active
040466590
ABSTRACT:
An improved method is described for coating a substrate in a system in which an insulating layer is also formed on one portion of a conductive target plate which is bombarded with ions. One such system is a reactive sputtering system in which a predetermined partial pressure of a reactive gas is established between a reactive metal target plate and the substrate. The bombarding ions are formed in a glow discharge plasma which may be magnetically confined. In accordance with the invention, an ac potential is applied to the target plate in order to prevent arcing which is believed due to the dielectric breakdown of the insulating layer.
REFERENCES:
patent: 3336211 (1967-08-01), Mayer
patent: 3655438 (1972-04-01), Sterling et al.
patent: 3878085 (1975-04-01), Corbani
patent: 3956093 (1976-05-01), McLeod
P. D. Davidse, "Theory and Practice of RF Sputtering," Vacuum, vol. 17/No. 3, Aug. 26, 1966, pp. 139-145.
Chapin, "The Planar Magnetron," Vacuum Technology, Jan. 1974, pp. 37-40.
Vratny, "Deposition of Tantalum and Tantalum Oxide by Superimposed RF and DC Sputtering," J. Electrochem. Soc., Solid State Science, pp. 505-507, May 1967.
Koenig et al, "Application of RF Discharges to Sputtering" by Koenig et al, IBM J. Res. & Dev., vol. 14, No. 2 (Mar. 1970), pp. 168-170.
Andresen Sigurd
Cormia Robert L.
Trumbly Terry A.
Airco, Inc.
Bopp Edmund W.
Draegert David A.
Langel Wayne A.
Vertiz O. R.
LandOfFree
Method for coating a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for coating a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for coating a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2161487