Method for coating a moving glass substrate

Coating processes – Coating by vapor – gas – or smoke – Moving the base

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4272553, 4272552, 4272551, 4272557, 4271263, 427166, 427167, 427109, 427108, 4274192, C23C 1600, C03C 17245

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active

054646570

ABSTRACT:
A method for coating a moving substrate provides a coating having a chemical composition which varies continuously from the interface with the substrate to the opposite surface of the coating. The method involves directing a vapor coating composition toward a substrate surface and moving portions of the vapor in opposite directions. A vapor coating mixture may include a tin-containing precursor and a silicon-containing precursor. An accelerant, e.g. a phosphorus-containing precursor, may be used with the metal-containing precursors to increase the deposition rate of the coating. The coating deposited on the substrate has regions of continuously varying weight percent of silicon oxide and tin oxide as the distance from the substrate-coating interface increases, with the surface of the coating farthest from the substrate-coating interface being predominantly tin oxide. The regions of varying composition provide the coating with varying indices of refraction to eliminate iridescence to provide a coated article, particularly a tin oxide coated glass article, with a neutral color.

REFERENCES:
patent: 3378396 (1968-04-01), Zaromb
patent: 3674453 (1972-07-01), Loukes et al.
patent: 3681042 (1972-08-01), Edwards et al.
patent: 4146657 (1979-03-01), Gordon
patent: 4187336 (1980-02-01), Gordon
patent: 4206252 (1980-06-01), Gordon
patent: 4265974 (1981-05-01), Gordon
patent: 4308316 (1981-12-01), Gordon
patent: 4377613 (1983-03-01), Gordon
patent: 4386117 (1983-05-01), Gordon
patent: 4419386 (1983-12-01), Gordon
patent: 4440822 (1984-04-01), Gordon
patent: 4468420 (1984-08-01), Kawahara et al.
patent: 4469045 (1984-09-01), Chesworth
patent: 4590096 (1986-05-01), Lindner
patent: 4853257 (1989-08-01), Henery
patent: 4894352 (1990-01-01), Lane et al.
patent: 4922853 (1990-05-01), Hofer
patent: 5168003 (1992-12-01), Proscia
patent: 5221352 (1993-06-01), Terneu et al.
patent: 5248545 (1993-09-01), Proscia
patent: 5271960 (1993-12-01), Proscia
patent: 5304394 (1994-04-01), Sauvinet et al.
Strong, J.; "Practical Applications of High and Low-Reflecting Films on Glass", Le Journal De Physique Et Le Radium, Jul. 11, 1950; pp. 441-443.
Delperier, B. et al.; "Analysis and Modelling of Tetraethoxysilane Pyrolysis"; Journal of Analytical and Applied Pyrolysis, 13 (1988) pp. 141-149.
Inoue, K. et al.; "Low Temperature Growth of SiO.sub.2 Thin Film by Double-Excitation Photo-CVD"; Japanese Journal of Applied Physics; vol. 26, No. 6, Jun. 1987, pp. 805-811.
Toyoda, Y. et al.; "Preparation of SiO.sub.2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect"; Japanese Journal of Applied Physics; vol. 26, No. 6, Jun., 1987, pp. 835-840.
Chang, C. P. et al.; "Ion and Chemical Radical Effects on the Step Coverage of Plasma Enhanced Chemical Vapor Deposition Tetraethylorthosilicate Films"; J. Appl. Phys.; 67(4), 15 Feb. 1990 no page data is available.
Niwano, M. et al.; "Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane"; Japanese Journal of Applied Physics; vol. 28, No. 7, Jul., 1989, pp. L1310-L1313.
Taylor, R. C. et al.; "Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films"; J. Electrochem. Soc.; vol. 136, No. 8, Aug. 1989, pp. 2382-2386.
Okuhara, T. et al.; "Preparation of SiO.sub.2 Overlayers on Oxide Substrates by Chemical Vapor Deposition of Si(OC.sub.2 H.sub.5).sub.4 ", Applied Surface Science 29 (1987), pp. 223-241.
Chapple-Sokol, J. D. et al.; "A Kinetics Study of the Atmospheric Pressure CVD Reaction of Silane and Nitrous Oxide"; J. Electrochem. Soc., vol. 136, No. 10, Oct. 1989, pp. 2993-3003.
Hochberg, A. K. et al.; "The Use of Liquid Sources in CVD Applications: Fire Safety Considerations and Delivery Methods"; Technical Article 15 of J. C. Schumacker, a Unit of Air Products and Chemicals, Inc. Year and page data are unavailable.
Crowell, J. E. et al.; "Model Studies of Dielectric Thin Film Growth: Chemical Vapor Deposition of SiO.sub.2 "; pp. 1864-1870 Journal and Year data are unavailable.
Pavelescu, C. et al.; "Correlations Between the Properties and the Deposition Kinetics of Low-Temperature Chemical Vapour Deposited SiO.sub.2 Films: The Effect of O.sub.2 /SiH.sub.4 Mole Ratio"; Journal of Materials Science Letters 9 (1990) pp. 143-144.
Lucovsky, G. et al.; "Deposition of Silicon Oxide, Nitride and Oxynitride Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition"; Journal of Non-Crystalline Solids; 90 (1987) pp. 259-266.
Orfescu, C. et al.; "An Etch Rate Study on Thermally Annealed SiO.sub.2 Films Deposited in a TESO-LPCVD System"; Journal of Materials Science 25 (1990) pp. 1366-1368.
Maruyama, Toshiro et al,; "Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon Tetraacetate"; Japanese Journal of Applied Physics; vol. 28, No. 12, Dec., 1989, pp. L2253-L2254.
Ozturk, Mehmet C. et al.; "Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide by Rapid Thermal Processing", Mat. Res. Soc. Symp. Proc., vol. 146, (1989) pp. 109-114.
Webb, Douglas A. et al.; "Silicon Dioxide Films Produced by PECVD of TEOS and TMCTS"; Proc. 2nd International ULSI Science and Technology Symposium ECS Proc. vol. 89 (9) (1989) pp. 571-578.
Hochberg, A. K. et al.; "The LPCVD of Silicon Oxide Films below 400.degree. C. from Liquid Sources", J. Electrochem. Soc., vol. 136, No. 6, Jun. 1989, pp. 1843-1844.
Hochberg, Dr. A. et al.; "User's Guide For: Glass Deposition with LTO-410.TM. Source Material" Journal, Year and Page data are unavailable.
Desu, S. B.; "Decomposition Chemistry of Tetraethoxysilane"; Abstrate No. 1855RNP; presented at the Fall Meeting of Electrochemical Society, Honolulu, Hi., 18-23 Oct. 1987 page data are unavailable.
Raju, Surya K. et al.; "Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO.sub.2 from Tetraethoxysilane" Journal, Year and Page data are unavailable.
J. C. Schumacher Co.,; Tetramethylcyclotetrasiloxane "Tomcats.TM."; Chemical & Physical Properties Journal, Year and Page data are unavailable.
Hochberg, A. K. et al.; "The Deposition of Silicon Oxide Films at Low Temperatures from Liquid Sources" Journal, Year and Page data are unavailable.

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