Method for cleaving brittle materials

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C225S005000, C257SE21237

Reexamination Certificate

active

11144465

ABSTRACT:
An apparatus for cleaving a section of a bar of brittle material is provided. The apparatus comprises a support adapted to hold the section of the bar in a position to be cleaved, a blade, an actuator coupled to the blade for driving the blade at least partially through the bar to create a cleaved portion of the bar, and a follower for engaging the end of the bar during cleaving. An method of cleaving a section of a bar of brittle material is also provided. The method comprises initiating a crack in the bar and driving a blade through the bar to remove a portion of the brittle material from the end of the bar. In one embodiment, the blades drives through the bar at a controlled speed.

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Hiroshi Koizumi, “Device and Method for Manufacturing Laser Diode,” English Translation of JP 11-284278 A, JPO, Oct. 1999.
Krejcik, P., et al., “A Method of Cleaving Extremely Thin Crystals”, Apparatus and Techniques, J. Phys. E: Sci Instrum., vol. 14, 1981, pp. 919-920.

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