Method for cleaving a semiconductor crystal body

Details Method for cleaving a semiconductor crystal body Method for cleaving a semiconductor crystal body

1992-09-21

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437227, H01L 21302, H01L 21306

Patent

active

052721140

ABSTRACT:
A method for cleaving a semiconductor crystal body having a first surface and an opposite second surface, comprising the steps of forming a channel on the first surface of the semiconductor, scribing a portion of the second surface opposite the channel on the first surface, and mechanically cleaving the semiconductor along a plane defined by said channel on the first surface and said scribe on the second surface.

REFERENCES:
patent: 4604161 (1986-08-01), Araghi
patent: 4822755 (1989-04-01), Hawkins et al.
patent: 4883771 (1989-11-01), Kumabe et al.
patent: 4961821 (1990-10-01), Drake et al.
patent: 5128282 (1992-07-01), Ormond et al.
patent: 5196378 (1993-03-01), Bean et al.
Tocci, "A Procedure to Produce Flat III-IV Substrate Material for Optoelectronic Devices", RCA Tech. Notes, May 13, 1986, TN No.: TN-1376 pp. 1-2.

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