Method for cleaning substrate surface

Details Method for cleaning substrate surface Method for cleaning substrate surface

2006-09-26

2006-09-26

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S026000, C134S030000, C216S067000, C216S068000, C216S069000, C216S074000, C216S076000, C216S079000, C438S906000, C438S710000

Reexamination Certificate

active

07111629

ABSTRACT:
There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. A mixture of H2and N2gas is used as a first processing gas. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching is removed in annealing step with H2flow. The environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process repeatability is improved.

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