Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-09-12
2006-09-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S695000, C438S689000, C438S715000
Reexamination Certificate
active
07105449
ABSTRACT:
A thermal cleaning of a substrate that has been subjected to wet cleaning is carried out under a high vacuum atmosphere to remove an oxide film remaining on the substrate. Thereafter, a thermal cleaning is carried out under a hydrogen atmosphere to remove contamination such as carbon or the like. At this time, the oxide film has already been removed and therefore contamination is effectively removed by a relatively low temperature and short duration thermal cleaning. Thus, problems such as the degradation of the profile of the impurity concentration in the impurity diffusion layer which has been formed over the substrate are prevented.
REFERENCES:
patent: 4452642 (1984-06-01), Dietz et al.
patent: 5821158 (1998-10-01), Shishiguchi
patent: 6121117 (2000-09-01), Sato et al.
patent: 6143128 (2000-11-01), Ameen et al.
patent: 6494959 (2002-12-01), Samoilov et al.
patent: 1-158720 (1989-06-01), None
patent: 3-150295 (1991-06-01), None
patent: 5-144751 (1993-06-01), None
patent: 6-69195 (1994-03-01), None
patent: 8-83769 (1996-03-01), None
patent: 9-12397 (1997-01-01), None
patent: 10-242059 (1998-09-01), None
patent: 11-162853 (1999-06-01), None
Kubo Minoru
Nozawa Katsuya
Saitoh Tohru
Le Thao P.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
LandOfFree
Method for cleaning substrate and method for producing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for cleaning substrate and method for producing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for cleaning substrate and method for producing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3615211