Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-11-27
2007-11-27
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S959000, C438S582000
Reexamination Certificate
active
11013067
ABSTRACT:
A method is provided to clean slurry particles from a surface in which tungsten and dielectric are coexposed after a dielectric CMP step. Such a surface is formed when tungsten features are patterned and etched, the tungsten features are covered with dielectric, and the dielectric is planarized to expose tops of the tungsten features. The surface to be cleaned is subjected to mechanical action in an acid environment. Suitable mechanical action includes performing a brief tungsten CMP step on the tungsten features or scrubbing the surface using, for example, a commercial post-CMP scrubber.
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Dunton Samuel V.
Radigan Steven J.
Le Thao P.
Reising Ethington Barnes Kisselle P.C.
Sandisk 3D LLC
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