Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Patent
1998-09-03
2000-11-28
Carrillo, S.
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
134 6, 134 254, 134 26, 134 29, 134 34, 134 36, 134 42, 134902, 438217, 438692, 510175, 510176, 510433, 510504, C23G 114
Patent
active
061521485
ABSTRACT:
A method for cleaning the surface of a semiconductor wafer having an organic dielectric film thereon by removing residual slurry particles adhered to the wafer surface after chemical-mechanical planarization is provided. The semiconductor is subjected to a post CMP cleaning step by applying mechanical frictional force to the surface of the wafer while concurrently applying to the wafer surface and aqueous solution having a pH of greater than 10 for a period of time sufficient to wet and clean the wafer surface, the basic aqueous solution comprised of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound such as tetramethylammonium hydroxide.
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3M, Flored Fluorosurfactants 3M Experience, pp. 1-2, Internet, Nov. 16, 1998.
George Anna M.
Towery Daniel L.
Carrillo S.
Honeywell Inc.
Weise Leslie
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