Method for cleaning semiconductor wafers

Details Method for cleaning semiconductor wafers Method for cleaning semiconductor wafers

1996-09-17

1998-09-22

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 26, 134 28, 134902, C03C 2300

Patent

active

058109404

ABSTRACT:
For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.

REFERENCES:
patent: 4577650 (1986-03-01), McConnell
patent: 4778532 (1988-10-01), McConnell et al.
patent: 4795497 (1989-01-01), McConnell et al.
patent: 4997490 (1991-03-01), Vetter et al.
patent: 5470393 (1995-11-01), Fukazawa
Werner Kern and David A. Puotinen, Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology, RCA Review Jun. 1970, pp. 187-205.
Alan E. Walter and Christopher F. McConnell, Direct Displacement Wet Processing: How it Affects Wafer Surface Phenomena, Microcontamination, Jan. 1990, pp. 35-38 and 60-61.

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