Method for cleaning semiconductor silicon wafer

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 3, 134 26, 134 28, B08B 300

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056651686

ABSTRACT:
A method for cleaning a semiconductor silicon wafer, which can suppress and reduce adhesion of particles to the surface of the wafer, is disclosed. The method includes the steps of cleaning the semiconductor silicon wafer by using hydrofluoric acid aqueous solution containing a surfactant, and thereafter rinsing the semiconductor silicon wafer by using pure water containing ozone.

REFERENCES:
patent: 4582624 (1986-04-01), Enjo et al.
patent: 4795582 (1989-01-01), Ohmi et al.
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5181985 (1993-01-01), Lampert et al.
patent: 5277835 (1994-01-01), Ohmi et al.
patent: 5378317 (1995-01-01), Kashiwase et al.
patent: 5397397 (1995-03-01), Awad
patent: 5464480 (1995-11-01), Matthews
T. Isagawa et al., "Ultra Clean Surface Preparation Using Ozonized Ultrapure Water", International Conference on Solid State Devices and Materials, Aug. 26-28, 1992, Tokyo, Japan, pp. 193-195.

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