Method for cleaning semiconductor devices

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

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134 2, 156 5, 156 17, B08B 312

Patent

active

039986535

ABSTRACT:
A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.

REFERENCES:
patent: 3033710 (1962-05-01), Hightower et al.
patent: 3041226 (1962-06-01), Pennington
patent: 3607477 (1971-09-01), Rao et al.
patent: 3863333 (1975-02-01), Loya

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