Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1992-12-17
1995-12-12
Breneman, R. Bruce
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
437225, C03C 1500
Patent
active
054746159
ABSTRACT:
A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.
REFERENCES:
patent: 4996077 (1991-02-01), Moslehi et al.
Akazawa Moriaki
Ishida Tomoaki
Kawai Kenji
Maruyama Takahiro
Ogawa Toshiaki
Breneman R. Bruce
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Method for cleaning semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for cleaning semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for cleaning semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1357332