Method for cleaning polysilicon

Details Method for cleaning polysilicon Method for cleaning polysilicon

2006-06-27

2006-06-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S906000

Reexamination Certificate

active

07067428

ABSTRACT:
A method for cleaning polysilicon comprises steps of cleaning solid or granular polysilicon with an aqueous solution of dissolved ozone, and of cleaning with hydrofluoric acid the polysilicon receiving the above cleaning based on an aqueous solution of dissolved ozone, wherein the above steps are executed once in this order, or the above steps are repeated once or more in this order. Subsequent to the last cleaning step using hydrofluoric acid, a still other step of cleaning the polysilicon with pure water and then drying it is preferably added.This method for cleaning polysilicon allows organic materials, particles and metal impurities adsorbed on the surface of polysilicon to be removed at a low cost, and to increase the freeing rate.

REFERENCES:
patent: 5904574 (1999-05-01), Nishijima
patent: 6100198 (2000-08-01), Grieger et al.

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