Cleaning and liquid contact with solids – Processes – Using solid work treating agents
Patent
1998-08-31
1999-10-26
El-Arini, Zeinab
Cleaning and liquid contact with solids
Processes
Using solid work treating agents
134 6, 134 2, 134 3, 134 28, 134 32, 134 33, 451 28, B08B 100, B08B 304, C03C 1900
Patent
active
059721243
ABSTRACT:
The present invention provides a method for cleaning particles from a semiconductor topography that has been polished using a fixed-abrasive polishing process by applying a cleaning solution including either (a) an acid and a peroxide or (b) an acid oxidant to the topography. According to an embodiment, a semiconductor topography is polished by a fixed-abrasive process in which the topography is pressed face-down on a rotating polishing pad having particles embedded in the pad while a liquid absent of particulate matter is dispensed onto the pad. The particles may include, e.g., cerium oxide, cerium dioxide, .alpha. alumina, .gamma. alumina, silicon dioxide, titanium oxide, chromium oxide, or zirconium oxide. A cleaning solution including either (a) an acid and a peroxide, e.g., hydrogen peroxide, or (b) an acid oxidant is applied to the semiconductor topography after the polishing process is completed. Examples of acids that may be used include, but are not limited to, sulfuric acid, hydrochloric acid, hydrobromic acid, hydrofluoric acid, formic acid, acetic acid, nitric acid, perchloric acid, perbromic acid, performic acid, phosphoric acid, and peracetic acid. Advantageously, the cleaning solution effectively eliminates all or at least a significant portion of the particles on the semiconductor topography.
REFERENCES:
patent: 3629023 (1971-12-01), Strehlow
patent: 3979239 (1976-09-01), Walsh
patent: 4256535 (1981-03-01), Banks
patent: 4261791 (1981-04-01), Shwartzman
patent: 4373991 (1983-02-01), Banks
patent: 4505720 (1985-03-01), Gabor et al.
patent: 4600469 (1986-07-01), Fusco et al.
patent: 4677043 (1987-06-01), Cordes, III et al.
patent: 4768883 (1988-09-01), Waldo et al.
patent: 4778532 (1988-10-01), McConnell et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4879258 (1989-11-01), Fisher
patent: 4933715 (1990-06-01), Yamada et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4954141 (1990-09-01), Takiyama et al.
patent: 4962423 (1990-10-01), Yamada et al.
patent: 4968381 (1990-11-01), Prigge et al.
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5032203 (1991-07-01), Doy et al.
patent: 5057462 (1991-10-01), Eisenberg et al.
patent: 5084419 (1992-01-01), Sakao
patent: 5209816 (1993-05-01), Yu et al.
patent: 5273558 (1993-12-01), Nelson et al.
patent: 5288333 (1994-02-01), Tanaka et al.
patent: 5320706 (1994-06-01), Blackwell
patent: 5320978 (1994-06-01), Hsu
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5346584 (1994-09-01), Nasr et al.
patent: 5362668 (1994-11-01), Tasaka
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5376482 (1994-12-01), Hwang et al.
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5389579 (1995-02-01), Wells
patent: 5392361 (1995-02-01), Imaizumi et al.
patent: 5395801 (1995-03-01), Doan et al.
patent: 5401691 (1995-03-01), Caldwell
patent: 5435772 (1995-07-01), Yu
patent: 5436488 (1995-07-01), Poon et al.
patent: 5441094 (1995-08-01), Pasch
patent: 5459096 (1995-10-01), Venkatesan et al.
patent: 5468983 (1995-11-01), Hirase et al.
patent: 5486265 (1996-01-01), Salugsugan
patent: 5492858 (1996-02-01), Bose et al.
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5503962 (1996-04-01), Caldwell
patent: 5525840 (1996-06-01), Tominaga
patent: 5541427 (1996-07-01), Chappell et al.
patent: 5551986 (1996-09-01), Jain
patent: 5573633 (1996-11-01), Gambino et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5591239 (1997-01-01), Larson et al.
patent: 5595937 (1997-01-01), Mikagi
patent: 5607345 (1997-03-01), Barry et al.
patent: 5616513 (1997-04-01), Shepard
patent: 5629242 (1997-05-01), Nagashima et al.
patent: 5643406 (1997-07-01), Shimomura et al.
patent: 5643823 (1997-07-01), Ho et al.
patent: 5643836 (1997-07-01), Meister et al.
patent: 5652176 (1997-07-01), Maniar et al.
patent: 5656097 (1997-08-01), Olesen et al.
patent: 5664990 (1997-09-01), Adams et al.
patent: 5665202 (1997-09-01), Subramanian et al.
patent: 5666985 (1997-09-01), Smith, Jr. et al.
patent: 5702977 (1997-12-01), Jang et al.
patent: 5728308 (1998-03-01), Muroyama
patent: 5906532 (1999-05-01), Nakajima et al.
Wolf, Silicon Processing for the VLSI Era vol. 2: Process Integration, Lattice Press 1990, pp. 189-191.
Singer, "CMP Developers Take Aim at STI Applications" and "Slurry-Free CMP Reduces Dishing, Speeds Process," Semiconductor International, vol. 21, No. 2, p. 40, Feb. 1998.
Ali et al., "Chemical-Mechanical Polishing of Interlayer Dielectric: A Review," Solid State Technology, Oct. 1994, pp. 63-68.
Sivaram et al., "Developments in Consumables Used in the Chemical Mechanical Polishing of Dielectrics", International Conference on Solid State Devices & Materials, Aug. 1995, p. 166.
Koutny, Jr. William W. C.
Sethuraman Anantha R.
Advanced Micro Devices , Inc.
Daffer Kevin L.
El-Arini Zeinab
LandOfFree
Method for cleaning a surface of a dielectric material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for cleaning a surface of a dielectric material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for cleaning a surface of a dielectric material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-759361