Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-02-04
1999-07-06
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
134 3, 134 28, H01L 2100, C23G 102
Patent
active
059197153
ABSTRACT:
An improved method for cleaning a group III-nitride-based semiconductor surface prior to depositing electrodes or growing additional layers of semiconductor. In a cleaning method according to the present invention, the surface of the semiconductor is brought into contact with an etchant solution that includes hydrofluoric acid. The etching step is preferably carried out at a HF concentration greater than 5% and at a temperature between 10 to 100.degree. C. in an inert atmosphere. The etchant solution may also include other acids. Group III-nitride semiconductor devices cleaned in this manner require lower driving voltages than devices cleaned with prior art methods.
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Kaneko Yawara
Tekeuchi Tetsuya
Dang Thi
Hewlett--Packard Company
Powell Alva C
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