Method for cleaning a semiconductor surface

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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134 3, 134 28, H01L 2100, C23G 102

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059197153

ABSTRACT:
An improved method for cleaning a group III-nitride-based semiconductor surface prior to depositing electrodes or growing additional layers of semiconductor. In a cleaning method according to the present invention, the surface of the semiconductor is brought into contact with an etchant solution that includes hydrofluoric acid. The etching step is preferably carried out at a HF concentration greater than 5% and at a temperature between 10 to 100.degree. C. in an inert atmosphere. The etchant solution may also include other acids. Group III-nitride semiconductor devices cleaned in this manner require lower driving voltages than devices cleaned with prior art methods.

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Q. A. Liu et al., Room Temperature Epitaxy of Pd Fllms of GaN under Conventional Vacuum Conditions, Appl. Phys. Lett., vol. 69, 1996, pp. 1722-1724.
P. Hacke et al., "Schottky Barrier on n-type GaN Grown by Hydride Vapor Phase Eiptaxy", Appl. Phys. Lett., vol. 63, 1993, pp. 2676-2678.
A. T. Ping et al., "Characterisation of Pd Schottky Barrier on n-type GaN", Electronics Letters, vol. 32, 1996, pp. 68-70.

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