Method for cleaning a semiconductor device

Details Method for cleaning a semiconductor device Method for cleaning a semiconductor device

2005-01-11

2005-01-11

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S002000, C134S003000, C134S019000, C134S031000, C216S017000, C216S039000, C216S063000, C216S067000, C216S075000, C216S077000, C216S078000, C438S906000

Reexamination Certificate

active

06840249

ABSTRACT:
In order to clean a semiconductor device having a dielectric layer deposited on a top surface of a lower metal wiring of the semiconductor device, and a contact hole or a via hole formed in the dielectric layer to expose the lower metal line therethrough, the semiconductor device is located within a radio frequency (RF) cleaning chamber. A gas mixture of HCl and H2O is introduced into the RF cleaning chamber and Ar gas plasma is generated in the RF cleaning chamber to excite HCl gas so that the HCl gas and an excited HCl gas are used to remove carbon radicals and metal particles.

REFERENCES:
patent: 4923828 (1990-05-01), Gluck et al.
patent: 5865900 (1999-02-01), Lee et al.
Condenced Chemical Dictionary by Van Nostrand Reinhold, 1993. pp. 540, 990.

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